advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 100v simple drive requirement r ds(on) 30m surface mount package i d 6.5a halogen free & rohs compliant product description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance junction-ambient 3 50 /w data and specifications subject to change without n otice thermal data parameter storage temperature range total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 drain current, v gs @ 10v 3 5.2 pulsed drain current 1 24 gate-source voltage + 20 drain current, v gs @ 10v 3 6.5 parameter rating drain-source voltage 100 halogen-free product 1 ap50t10gm-hf 201501124 g d s s s s g d d d d so-8 ap50t10 series are from advanced power innovated design and silicon process technology to achieve the lowest possib le on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the so-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v v gs =10v, i d =6a - - 30 m v gs =5v, i d =4a - - 70 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =6a - 12 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =6a - 41 65 nc q gs gate-source charge v ds =50v - 6 - nc q gd gate-drain ("miller") charge v gs =10v - 15.5 - nc t d(on) turn-on delay time v ds =50v - 10 - ns t r rise time i d =1a - 9.5 - ns t d(off) turn-off delay time r g =3.3 - 37 - ns t f fall time v gs =10v - 19 - ns c iss input capacitance v gs =0v - 1810 2940 pf c oss output capacitance v ds =15v - 250 - pf c rss reverse transfer capacitance f=1.0mhz - 190 - pf r g gate resistance f=1.0mhz - 1.7 3.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.9a, v gs =0v - - 1.3 v t rr reverse recovery time i s =6a, v gs =0v - 40 - ns q rr reverse recovery charge di/dt=100a/s - 70 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 125 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 ap50t10gm-hf r ds(on) static drain-source on-resistance 2
ap50t10gm-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltag e fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 0 2 4 6 8 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 6.0v 5.0v v g =4.0v t a =25 o c 8.0v 0 10 20 30 40 0 2 4 6 8 10 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 6 a v g =10v 20 30 40 50 60 2 4 6 8 10 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d =4a t a =25 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =1ma
ap50t10gm-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 q v g 10v q gs q gd q g charge 0 400 800 1200 1600 2000 2400 2800 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0 2 4 6 8 10 12 0 10 20 30 40 50 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =6a v ds =50v 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a rthja = 125 /w t t 0.02 operation in this area limited by r ds(on) t d(on) t r t d(off) t f v ds v gs 10% 90%
marking information 5 ap50t10gm-hf 50t10gm ywwsss part number date code (ywwsss) y last digit of the year ww week sss sequence package code meet rohs requirement for low voltage mosfet only
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